1978, Bachelor of Engineering, School of Science and Engineering, Waseda University.
1980,Master of Engineering, Graduate School of Science and Engineering,
Waseda University.
1980-1982,Semiconductor & Integrated Circuits Division, Hitachi Ltd.
1985, Doctor of Engineering, Graduate School of Science and Engineering,
Waseda University.
1986-1990, Assistant Professor, Faculty of Engineering, Osaka University.
1990-1995, Associate Professor, School of Science and Engineering, Waseda University.
1995- present, Professor, School of Science and Engineering, Waseda University.

1995-1996, Research Fellowship, Alexander von Humboldt Foundation
1998-2003, Team Leader CREST Project (JST) “Fine structured Diamond Electron Devices Formed by Controlling Surface Adsorbates”
1998- Organizer, European Conference on Diamond, Carbon Nanotube----
2002- Editor, Diamond and Related Materials (Elsevier)

My Research on Diamond Devices:
Due to its extreme properties, diamond is expected to be the ultimate semiconductor device. However, its progress as an active device has been slow because there has been no doping technology developed to realize its high electrical conductance. We focused on surface accumulation layer appearing on a hydrogen terminated diamond surface and developed surface channel field effect transistors (FETs). This type of FET is applicable in high-frequency devices operating at high power, in-plane-gate FETs for nanoelectronics, and biosensors in electrolyte solution.